Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence
2016
MonolayerWS2 offers great promise for use in optical devices due to its direct bandgap and high
photoluminescenceintensity. While fundamental investigations can be performed on exfoliated material, large-area and high quality materials are essential for implementation of technological applications. In this work, we synthesize
monolayerWS2 under various controlled conditions and characterize the films using
photoluminescence, Raman and x-ray photoelectron spectroscopies. We demonstrate that the introduction of hydrogen to the argon carrier gas dramatically improves the optical quality and increases the growth area of WS2, resulting in films exhibiting mm2 coverage. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized
monolayers. The stoichiometric WS2
monolayerssynthesized using Ar + H2 carrier gas exhibit superior optical characteristics, with
photoluminescenceemission full width half maximum (FWHM) values below 40 meV and emission intensities nearly an order of magnitude higher than films synthesized in a pure Ar environment.
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