Equivalent-circuit model for vacuum ultraviolet irradiation of dielectric films

2012 
Vacuum ultraviolet (VUV) irradiation, which occurs during plasma processing, causes photoemission of electrons from the dielectrics. Photoemission primarily occurs from defect states in the band gap of the dielectric and results in trapped positive charges. The trapped positive charges are negated by photoinjection of electrons from the underlying substrate into the dielectric. The authors propose an equivalent-circuit model using with which, once the circuit parameters are determined, charging of dielectric materials under VUV irradiation can be predicted. The circuit includes a dielectric capacitor, the intrinsic and photo conductivities of the dielectric and substrate, and the processes of photoemission and photoinjection.
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