Progress of power field effect transistor based on ultra-wide bandgap Ga 2 O 3 semiconductor material

As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga 2 O 3 ) has attracted increasing attention in recent years. The high theoretical breakdown electrical field (8 MV/cm), ultra-wide bandgap (~ 4.8 eV) and large Baliga’s figure of merit (BFOM) of Ga 2 O 3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor (FET). In this paper, we introduce the basic physical properties of Ga 2 O 3 single crystal, and review the recent research process of Ga 2 O 3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga 2 O 3 is preliminary revealed. Finally, the prospect of the Ga 2 O 3 based FET for power electronics application is analyzed.