Modification of electrical and optical properties of metal nitride thin films by hydrogen inclusion

Hydrogen atoms included in metals and compounds can modify the electrical and optical properties of the materials. Change of electronic properties of copper nitride and aluminum nitride by hydrogen ion implantation are studied as an example for the hydrogen induced modification of material properties. Electrical conductivity of copper nitrides increased more than two orders of magnitude by hydrogen implantation. Aluminum nitride remained insulating but the optical absorption coefficient increased. The modification may be considered due to the formation of impurity donor states in the band gap of the compounds.